Satoshi Moriyama et al 2010 Sci. Technol. Adv. Mater. 11 054601 doi:10.1088/1468-6996/11/5/054601
Satoshi Moriyama1, Yoshifumi Morita2, Eiichiro Watanabe3, Daiju Tsuya3, Shinya Uji4, Maki Shimizu5 and Koji Ishibashi5
Show affiliationsWe describe our recent experimental results on the fabrication of quantum-dot devices in a graphene-based two-dimensional system. Graphene samples were prepared by micromechanical cleavage of graphite crystals on a SiO2/Si substrate. We performed micro-Raman spectroscopy measurements to determine the number of layers of graphene flakes during the device fabrication process. By applying a nanofabrication process to the identified graphene flakes, we prepared a double-quantum-dot device structure comprising two lateral quantum dots coupled in series. Measurements of low-temperature electrical transport show the device to be a series-coupled double-dot system with varied interdot tunnel coupling, the strength of which changes continuously and non-monotonically as a function of gate voltage.
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
Issue 5 (October 2010)
Received 23 July 2010, accepted for publication 15 October 2010
Published 22 December 2010
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Satoshi Moriyama et al 2010 Sci. Technol. Adv. Mater. 11 054601