Perspectives of Innovations, Economics and Business
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| Volume | 2 |
| Issue | 2 |
| Online publication date | 2009-10-09 |
| Title | Use prospects in microelectronics for polycrystalline silicon film structures with p–n junction |
| Author | Raimjon Aliev, Erkin Mutarov |
| Abstract | The paper discusses perspectives of elaborating microelectronic and optoelectronic devices on polycrystalline silicon films. The I-V features of structures with p-n-junction, formed by using methods of р-type conductivity layer grow, thermal diffusion and ion-implantation of boron atoms into n-type polycrystalline silicon layer are compared. The I-V feature with S-form curve of the investigated structures conditioned by changing of the conductivities of base and grain boundaries under thermal processing are revealed. |
| Keywords | Polycrystalline silicon, grain boundaries, ion-implantation, microelectronics, negative differential resistance, photodiode, I-V characteristics |
| Pages | 106-109 |
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