Epitaxial growth of silicon and germanium on (100)-oriented crystalline substrates by RF PECVD at 175 °C

M. Labrune^1,2a, X. Bril¹, G. Patriarche³, L. Largeau³, O. Mauguin³ and P. Roca i Cabarrocas¹

¹ LPICM, CNRS-École Polytechnique, 91128 Palaiseau Cedex, France
² TOTAL S.A., Gas & Power, R&D Division, Courbevoie, France
³ Laboratoire de Photonique et de Nanostructures, CNRS, Marcoussis, France

^a e-mail: martin.labrune@mines-paris.org

Received: 25 January 2012
Accepted: 14 June 2012
Published online: 13 November 2012

Abstract

We report on the epitaxial growth of crystalline Si and Ge thin films by standard radio frequency plasma enhanced chemical vapor deposition at 175 °C on (100)-oriented silicon substrates. We also demonstrate the epitaxial growth of silicon films on epitaxially grown germanium layers so that multilayer samples sustaining epitaxy could be produced. We used spectroscopic ellipsometry, Raman spectroscopy, transmission electron microscopy and X-ray diffraction to characterize the structure of the films (amorphous, crystalline). These techniques were found to provide consistent results and provided information on the crystallinity and constraints in such lattice-mismatched structures. These results open the way to multiple quantum-well structures, which have been so far limited to few techniques such as Molecular Beam Epitaxy or MetalOrganic Chemical Vapor Deposition.